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TYPICAL PERFORMANCE CURVES (R)
APT150GN60JDQ4 600V
APT150GN60JDQ4
E G C E
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses.
S
OT
22
7
ISOTOP (R)
"UL Recognized"
file # E145592
* 600V Field Stop * Trench Gate: Low VCE(on) * Easy Paralleling * Intergrated Gate Resistor: Low EMI, High Reliability
C G E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
APT150GN60JDQ4 UNIT Volts
600 30 220 123 450 450A @ 600V 536 -55 to 175 300
Amps
Switching Safe Operating Area @ TJ = 175C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA) Gate Threshold Voltage (VCE = VGE, I C = 2400A, Tj = 25C) MIN TYP MAX Units
600 5.0 1.05 5.8 1.45 1.65 50
2
6.5 1.85
Collector-Emitter On Voltage (VGE = 15V, I C = 150A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 150A, Tj = 125C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C)
2
Volts
I CES I GES RG(int)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V) Intergrated Gate Resistor
A nA
4-2006 050-7625 Rev A
TBD 600 2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT150GN60JDQ4
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 300V I C = 150A TJ = 175C, R G = 4.3 7, VGE = 15V, L = 100H,VCE = 600V Inductive Switching (25C) VCC = 400V VGE = 15V I C = 150A VGE = 15V MIN TYP MAX UNIT pF V nC
9200 350 300 9.5 970 65 510 450 44 110 430 60 8810 8615 4295 44 110 480 95 8880 9735 5460 J
ns ns A
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
44 55 4 5
RG = 1.0 7 TJ = +25C
Turn-on Switching Energy (Diode)
6
J
Inductive Switching (125C) VCC = 400V VGE = 15V I C = 150A
Turn-on Switching Energy (Diode)
66
TJ = +125C
RG = 1.0 7
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC VIsolation WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) RMS Voltage (50-60Hz Sinusoidal Package Weight
Waveform from Terminals to Mounting Base for 1 Min.)
MIN
TYP
MAX
UNIT C/W Volts
0.28 .33 2500 1.03 29.2 10 1.1
oz gm Ib*in N*m
Torque
Maximum Terminal & Mounting Torque
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471.
4-2006 Rev A 050-7625
4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452)
APT Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
350 300
V
GE
= 15V
400 350 IC, COLLECTOR CURRENT (A) 300 250 200 150 100 50 0 12, 13 &15V 11V
APT150GN60JDQ4
TJ = -55C TJ = 25C
IC, COLLECTOR CURRENT (A)
250
TJ = 125C
200 150 100 50 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
TJ = 175C
10V
9V 8V 7V
350 300 250 200 150 100
FIGURE 1, Output Characteristics(TJ = 25C)
16 VGE, GATE-TO-EMITTER VOLTAGE (V) 14 12 10
FIGURE 2, Output Characteristics (TJ = 125C)
I = 150A C T = 25C
J
0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
TJ = -55C TJ = 25C TJ = 125C TJ = 175C
VCE = 120V VCE = 300V
8 6 4 2 0 0 200
VCE = 480V
50 0 0 2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
400 600 800 1000 GATE CHARGE (nC) FIGURE 4, Gate Charge
1200
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
3.5 3.0 2.5 2.0 1.5 1.0 0.5
IC = 300A
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
4.0
3.0 2.5 2.0
IC = 300A IC = 150A
IC = 150A IC = 75A
1.5 1.0 0.5 0
IC = 75A
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.15
0
8
25 50 75 100 125 150 175 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 300
0
IC, DC COLLECTOR CURRENT(A)
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75
250 200 150 100 50 0 -50 -25
050-7625
0.70 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Threshold Voltage vs. Junction Temperature
0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature
Rev A
4-2006
60 50 40 30 20 10 T = 25C, or 125C J
VCE = 400V RG = 1.0 L = 100H
600 td (OFF), TURN-OFF DELAY TIME (ns) 500 400 300 200 100 VCE = 400V RG = 1.0
VGE =15V,TJ=125C
APT150GN60JDQ4
td(ON), TURN-ON DELAY TIME (ns)
VGE = 15V
VGE =15V,TJ=25C
110 150 190 230 270 310 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 30
400 350 300 250 200 150 100 50 tf, FALL TIME (ns) tr, RISE TIME (ns)
TJ = 25 or 125C,VGE = 15V RG = 1.0, L = 100H, VCE = 400V
0
110 150 190 230 270 310 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 30
180 160 140 120 100 80 60 40 20
TJ = 25C, VGE = 15V
0
L = 100H
TJ = 125C, VGE = 15V
70 110 150 190 230 270 310 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 30
40,000 EON2, TURN ON ENERGY LOSS (J) 35,000 30,000 25,000 20,000 15,000 10,000 5,000 0
TJ = 25C TJ = 125C
0
70 110 150 190 230 270 310 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 30
18,000 EOFF, TURN OFF ENERGY LOSS (J) 16,000 14,000 12,000 10,000 8,000 6,000 4,000 2,000 0
TJ = 25C TJ = 125C
= 400V V CE = +15V V GE R = 1.0
G
0
RG = 1.0, L = 100H, VCE = 400V
= 400V V CE = +15V V GE R = 1.0
G
70 110 150 190 230 270 310 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current
70,000 SWITCHING ENERGY LOSSES (J) 60,000 50,000 40,000 30,000 20,000 10,000 0
Eoff,300A Eon2,150A Eon2,75A Eoff,75A Eoff,150A
= 400V V CE = +15V V GE T = 125C
J
70 110 150 190 230 270 310 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current
40,000 SWITCHING ENERGY LOSSES (J) 35,000 30,000 25,000 20,000 15,000 10,000 5,000 0
Eoff,150A Eoff,75A Eon2,150A Eon2,75A Eoff,300A
= 400V V CE = +15V V GE R = 1.0
G
Eon2,300A
Eon2,300A
Rev A
4-2006
050-7625
20 15 10 5 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance 0
125 100 75 50 25 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature 0
TYPICAL PERFORMANCE CURVES
20,000 10,000 C, CAPACITANCE ( F) 500 Cies IC, COLLECTOR CURRENT (A)
500
APT150GN60JDQ4
400
P
300
100 50 Coes Cres 10 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
200
100
0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
0.30 0.25 0.20 0.15 0.10 0.05 0 D = 0.9
ZJC, THERMAL IMPEDANCE (C/W)
0.7
0.5
Note:
PDM
0.3
t1 t2
0.1 0.05 10-5 10-4
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
50 FMAX, OPERATING FREQUENCY (kHz)
RC MODEL Junction temp. (C) 0.0964 Power (watts) 0.184 Case temperature. (C) 0.300 0.00770
10
F
5
T = 125C J T = 75C C D = 50 % V = 400V CE R = 1.0
G
= min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf
max
fmax2 = Pdiss =
Pdiss - Pcond Eon2 + Eoff TJ - TC RJC
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
70 90 110 130 150 170 190 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
1
30
50
050-7625
Rev A
4-2006
APT150GN60JDQ4
APT100DQ60
10% td(on) tr
Gate Voltage TJ = 125C
Collector Current 90%
V CC
IC
V CE
5%
10%
5% Collector Voltage
A
Switching Energy
D.U.T.
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90% Gate Voltage td(off) 90% Collector Voltage 10%
TJ = 125C
tf
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
050-7625
Rev A
4-2006
TYPICAL PERFORMANCE CURVES
APT150GN60JDQ4
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Symbol VF Characteristic / Test Conditions Maximum Average Forward Current (TC = 103C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Characteristic / Test Conditions IF = 150A Forward Voltage IF = 300A IF = 150A, TJ = 125C Characteristic Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
0.35 , THERMAL IMPEDANCE (C/W) 0.30 0.25 0.20 0.5 0.15 0.10 0.05 0 10-5 0.3 0.1 0.05 0.05 10-4
Note:
All Ratings: TC = 25C unless otherwise specified.
APT100GN60LDQ4 UNIT Amps
100 146 1000
MIN TYP MAX UNIT Volts
STATIC ELECTRICAL CHARACTERISTICS 1.83 2.33 1.47
MIN TYP 34 MAX UNIT ns nC
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Test Conditions IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C IF = 100A, diF/dt = -200A/s VR = 400V, TC = 25C
IF = 100A, diF/dt = -200A/s VR = 400V, TC = 125C
160 290 5 220 1530 13 100 2890 44 -
Amps ns nC Amps ns nC Amps
-
IF = 100A, diF/dt = -1000A/s VR = 400V, TC = 125C
-
D = 0.9
0.7
PDM
t1 t2
JC
SINGLE PULSE SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
Z
10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (seconds) FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
RC MODEL Junction temp (C)
Case temperature (C)
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL
050-7625
0.0743
5.17
Rev A
Power (watts)
0.188
0.361
4-2006
0.0673
0.0182
300 250 IF, FORWARD CURRENT (A) 200 TJ = 175C 150 100 50 TJ = -55C 0 0.5 1.0 1.5 2.0 2.5 3.0 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 25. Forward Current vs. Forward Voltage
T =125C J V =400V
R
300
trr, REVERSE RECOVERY TIME (ns) TJ = 25C
APT150GN60JDQ4
T =125C J V =400V
R
250 200 150 100 50 0
200A 100A 50A
TJ = 125C
0
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 26. Reverse Recovery Time vs. Current Rate of Change
4000 IRRM, REVERSE RECOVERY CURRENT (A) Qrr, REVERSE RECOVERY CHARGE (nC) 3500 3000 2500 2000 1500 1000 500 0 50A 100A 200A
60
T =125C J V =400V
50 40 30 20 10 0
R
200A
100A 50A
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 27. Reverse Recovery Charge vs. Current Rate of Change
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Current vs. Current Rate of Change 180 160 140 120
Duty cycle = 0.5 T =175C
J
1.2 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.0 0.8 0.6 0.4 0.2 0.0 trr IRRM Qrr
Qrr trr
IF(AV) (A)
100 80 60 40 20
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 29. Dynamic Parameters vs. Junction Temperature
0
75 100 125 150 175 Case Temperature (C) Figure 30. Maximum Average Forward Current vs. CaseTemperature
0
25
50
1400 CJ, JUNCTION CAPACITANCE (pF) 1200 1000 800 600 400 200
10 100 200 VR, REVERSE VOLTAGE (V) Figure 31. Junction Capacitance vs. Reverse Voltage
Rev A
4-2006
0
1
050-7625
TYPICAL PERFORMANCE CURVES
+18V 0V diF /dt Adjust
Vr
APT60M75L2LL
APT150GN60JDQ4
D.U.T. 30H
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure 32. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
0.25 IRRM
5
Figure 33, Diode Reverse Recovery Waveform and Definitions
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places)
11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
* Emitter/Anode
Collector/Cathode
* Emitter/Anode terminals are shorted internally. Current handling capability is equal for either Emitter/Anode terminal.
4-2006 050-7625 Rev A
* Emitter/Anode Dimensions in Millimeters and (Inches)
Gate
ISOTOP(R) is a Registered Trademark of SGS Thomson. APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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